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MBRD360 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBRD360 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() ISS5004 eq MBRD360 Schottky Diode www.iscsemi.com 1 FEATURES ·Very low Vf ·Extremely low switching losses ·Low Irm values ·Improved thermal circuit operation ·High reliability circuit operation ·Low voltage peaks for reduced protection circuits ·Low noise switching Applications ·Rectifiers in switch mode power supplies ·Free wheeling diode in low voltage converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE UNIT VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 60 V IF(AV) AverageRectifiedForwardCurrent @TC=125℃ 3 A IRSM PeakRepetitiveForwardCurren t@TC=125℃ 6 A IFSM Nonrepetitive Peak Surge Current T=10ms;(60Hz),sine;VR=0V 75 A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~175 ℃ |
Numéro de pièce similaire - MBRD360 |
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Description similaire - MBRD360 |
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