ISF1035 datasheet(1/4 Pages) ISC

No de pièce	ISF1035

Description	N-Channel MOSFET Transistor

PDF	4 Pages

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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ISF1035

eq FDPF18N50T

N-Channel MOSFET Transistor

www.iscsemi.com

1

FEATURES

·

Drain Current –ID=18A@ TC=25℃

·

Drain Source Voltage- VDSS=500V(Min)

·

Static Drain-Source On-Resistance

: RDS(on) = 0.265Ω(Max)@VGS= 10V

APPLICATIONS

·

Switch Mode Power Supply (SMPS)

·

Uninterruptible Power Supply (UPS)

·

Power Factor Correction (PFC)

Absolute Maximum Ratings(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

500

V

VGS

Gate-Source Voltage-Continuous

±

30

V

ID

Drain Current-Continuous

18

A

IDM

Drain Current-Single Pluse

72

A

EAS

Single Pulse Avalanche Energy (note2)

945

mJ

IAS

Avalanche Current

(note1)

18

A

PD

Total Dissipation @TC=25℃

38.5

W

TJ

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

Notes

1.Repetitive rating:Pulse width limited by maximum junction temperature

2.L= 5.2mH,VDD= 50V,Rg=25Ω,Starting TJ=25℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

3.3

℃

/W

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