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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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ISF1031 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISF1031 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISF1031 eq AOD66620 N-Channel MOSFET www.iscsemi.com 1 FEATURES ·Drain Current -ID= 58A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V APPLICATIONS · ATX and Gaming Power Supplies · Switch Supplies · Synchronous Rectification in SMPS Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGSS Gate-Source Opetation Voltage ± 20 V ID Drain Current-Continuous 58 A IDM Drain Current-Single Pluse 125 A PD Total Dissipation @TC=25℃ 52 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.4 ℃ /W |
Numéro de pièce similaire - ISF1031 |
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Description similaire - ISF1031 |
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