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2SA1943 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce 2SA1943
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA1943 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISBL3020P
eq 2SA1943
isc Silicon PNP Power Transistor
www.iscsemi.com
2023-9-20
1
DESCRIPTION
·
Collector-Emitter Breakdown Voltage
-V(BR)CEO=-300V(Min)
·
Collector-Emitter Saturation Voltage
-VCE(sat)= -3.0V(Max) @IC= -8A
APPLICATIONS
·
Designed for power amplifier,high speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-300
V
VCEO
Collector-Emitter Voltage
-300
V
VEBO
Emitter-Base Voltage
-5
V
ICM
Collector Current-Continuous
-25
A
IB
Base Current
-1.5
A
PCM
Collector Power Dissipation
250
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.5
℃
/W


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