SPC6604ST6RGB datasheet(4/10 Pages) VBSEMI

No de pièce	SPC6604ST6RGB

Description	N- and P-Channel 20V (D-S) MOSFET

PDF	10 Pages

Scroll/Zoom	100%

Fabricant	VBSEMI [VBsemi Electronics Co.,Ltd]

Site Internet	www.VBsemi.com

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4 / 10 page

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

1.0

1.2

0.1

0.2

0.4

0.6

0.8

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

- 0.8

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power (Junction-to-Ambient)

0.00

0.0

2468

ID = 2.5 A

VGS - Gate-to-Source Voltage (V)

ID = 2 A

0.01

0.1

Time (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (s)

0.1

0.01

10-3

10-2

600

10-1

10-4

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

100

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 130 °C/W

3. TJM - TA = PDMZthJA(t)

Notes:

4. Surface Mounted

PDM

SPC6604ST6RGB

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