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SM2700CSC Fiches technique(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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SM2700CSC Fiches technique(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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1 / 10 page ![]() 1 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET •100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) N-Channel 20 0. 022 at V GS = 10 V 5. 0. 036 at V GS = 4.5 V 4.2 P-Channel - 20 0. 030 at V GS = - 10 V - 3.4 0. 079 at V GS = - 4.5 V - 2.5 TSOP-6 Top View 6 4 1 2 3 5 2.85 mm 3 mm D2 G2 S1 S2 D1 G1 D1 G1 S1 N-Channel MOSFET S2 G2 D2 P-Channel MOSFET Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 - 20 V Gate-Source Voltage VGS ± 20 ± 20 Continuous Drain Current (TJ = 150 °C) a, b TA = 25 °C ID 5. - 3.4 A TA = 70 °C 4.0 - 2.3 Pulsed Drain Current IDM Continuous Source Current (Diode Conduction)a, b IS 1.05 - 1.05 Maximum Power Dissipationa, b TA = 25 °C PD 1.15 W TA = 70 °C 0.73 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 5 s RthJA 93 110 °C/W Steady State 130 150 Maximum Junction-to-Lead Steady State RthJL 75 90 N- and P-Channel V (D-S) MOSFET SM2700CSC www.VBsemi.com 5 5 15 10 0 2 服务热线:400-655-8788 |
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