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SM2700CSC Fiches technique(PDF) 1 Page - VBsemi Electronics Co.,Ltd

No de pièce SM2700CSC
Description  N- and P-Channel 20V (D-S) MOSFET
PDF  10 Pages
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Fabricant  VBSEMI [VBsemi Electronics Co.,Ltd]
Site Internet  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

SM2700CSC Fiches technique(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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1
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFET
•100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (A)
N-Channel
20
0.
022 at V
GS = 10 V
5.
0.
036 at V
GS = 4.5 V
4.2
P-Channel
- 20
0.
030 at V
GS = - 10 V
-
3.4
0.
079 at V
GS = - 4.5 V
-
2.5
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
D2
G2
S1
S2
D1
G1
D1
G1
S1
N-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
Notes:
a. Surface Mounted on FR4 board.
b. t
≤ 5 s.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
20
- 20
V
Gate-Source Voltage
VGS
± 20
± 20
Continuous Drain Current (TJ = 150 °C)
a, b
TA = 25 °C
ID
5.
-
3.4
A
TA = 70 °C
4.0
-
2.3
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)a, b
IS
1.05
- 1.05
Maximum Power Dissipationa, b
TA = 25 °C
PD
1.15
W
TA = 70 °C
0.73
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t
≤ 5 s
RthJA
93
110
°C/W
Steady State
130
150
Maximum Junction-to-Lead
Steady State
RthJL
75
90
N- and P-Channel
V (D-S) MOSFET
SM2700CSC
www.VBsemi.com
5
5
15
10
0
2
服务热线:400-655-8788


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