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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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AT89C51CC03U-RDTIM Fiches technique(PDF) 41 Page - ATMEL Corporation |
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AT89C51CC03U-RDTIM Fiches technique(HTML) 41 Page - ATMEL Corporation |
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41 / 197 page  41 AT89C51CC03 4182K–CAN–05/06 Program/Code Memory The AT89C51CC03 implement 64K Bytes of on-chip program/code memory. Figure 20 shows the partitioning of internal and external program/code memory spaces depending on the product. The Flash memory increases EPROM and ROM functionality by in-circuit electrical era- sure and programming. Thanks to the internal charge pump, the high voltage needed for programming or erasing Flash cells is generated on-chip using the standard VDD volt- age. Thus, the Flash Memory can be programmed using only one voltage and allows In- System Programming commonly known as ISP. Hardware programming mode is also available using specific programming tool. Figure 20. Program/Code Memory Organization 0000h 64K Bytes FFFFh internal 0000h FFFFh Flash 64K Bytes external memory EA = 0 EA = 1 |
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