Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

AT45DB011 Fiches technique(PDF) 2 Page - ATMEL Corporation

No de pièce AT45DB011
Description  1-megabit 2.7-volt Only Serial DataFlash
PDF  20 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  ATMEL [ATMEL Corporation]
Site Internet  http://www.atmel.com
Logo ATMEL - ATMEL Corporation

AT45DB011 Fiches technique(HTML) 2 Page - ATMEL Corporation

  AT45DB011 Datasheet HTML 1Page - ATMEL Corporation AT45DB011 Datasheet HTML 2Page - ATMEL Corporation AT45DB011 Datasheet HTML 3Page - ATMEL Corporation AT45DB011 Datasheet HTML 4Page - ATMEL Corporation AT45DB011 Datasheet HTML 5Page - ATMEL Corporation AT45DB011 Datasheet HTML 6Page - ATMEL Corporation AT45DB011 Datasheet HTML 7Page - ATMEL Corporation AT45DB011 Datasheet HTML 8Page - ATMEL Corporation AT45DB011 Datasheet HTML 9Page - ATMEL Corporation Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 20 page
background image
AT45DB011
2
uses a serial interface to sequentially access its data. The
simple seria l interfa ce facilitates ha rdware layo ut,
increases system reliability, minimizes switching noise, and
reduces package size and active pin count. The device is
optimized for use in many commercial and industrial appli-
cations where high density, low pin count, low voltage, and
low power are essential. Typical applications for the
DataFlash are digital voice storage, image storage, and
data storage. The device operates at clock frequencies up
to 13 MHz with a typical active read current consumption of
4mA.
To allow for simple in-system reprogrammability, the
AT45DB011 does not require high input voltages for pro-
gramming. The device operates from a single power
supply, 2.7V to 3.6V, for both the program and read opera-
tions. The AT45DB011 is enabled through the chip select
pin (CS) and accessed via a three-wire interface consisting
of the Serial Input (SI), Serial Output (SO), and the Serial
Clock (SCK).
All programming cycles are self-timed, and no separate
erase cycle is required before programming.
Block Diagram
Memory Array
To provide optimal flexibility, the memory array of the
AT45DB011 is divided into three levels of granularity com-
prising of sectors, blocks, and pages. The Memory
Architecture Diagram illustrates the breakdown of each
level and details the number of pages per sector and block.
All program operations to the DataFlash occur on a page
by page basis; however, the optional erase operations can
be performed at the block or page level.
FLASH MEMORY ARRAY
PAGE (264 BYTES)
BUFFER (264 BYTES)
I/O INTERFACE
SCK
CS
RESET
VCC
GND
RDY/BUSY
WP
SO
SI



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20


Fiches technique Télécharger

Go To PDF Page


Lien URL



ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Lien vers la fiche technique    |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com