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BYG80D Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce BYG80D
Description  Ultra fast low-loss controlled avalanche rectifiers
PDF  20 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYG80D Fiches technique(HTML) 2 Page - NXP Semiconductors

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1997 Nov 25
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• UL 94V-O classified plastic
package
• Shipped in 12 mm embossed tape.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
handbook, 4 columns
MSA474
Top view
Side view
cathode
band
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYG80A
−
50
V
BYG80B
−
100
V
BYG80C
−
150
V
BYG80D
−
200
V
BYG80F
−
300
V
BYG80G
−
400
V
BYG80J
−
600
V
VR
continuous reverse voltage
BYG80A
−
50
V
BYG80B
−
100
V
BYG80C
−
150
V
BYG80D
−
200
V
BYG80F
−
300
V
BYG80G
−
400
V
BYG80J
−
600
V
IF(AV)
average forward current
Ttp = 100 °C; see Figs 2, 3 and 4
averaged over any 20 ms period;
see also Figs 17, 18 and 19
BYG80A to D
−
2.4
A
BYG80F; BYG80G
−
2.3
A
BYG80J
−
2.0
A
IF(AV)
average forward current
Tamb =60 °C; AL2O3 PCB mounting
(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19
BYG80A to D
−
1.25
A
BYG80F; BYG80G
−
1.15
A
BYG80J
−
0.95
A



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