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BYD13 Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce BYD13
Description  Controlled avalanche rectifiers
PDF  7 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYD13 Fiches technique(HTML) 2 Page - NXP Semiconductors

  BYD13 Datasheet HTML 1Page - NXP Semiconductors BYD13 Datasheet HTML 2Page - NXP Semiconductors BYD13 Datasheet HTML 3Page - NXP Semiconductors BYD13 Datasheet HTML 4Page - NXP Semiconductors BYD13 Datasheet HTML 5Page - NXP Semiconductors BYD13 Datasheet HTML 6Page - NXP Semiconductors BYD13 Datasheet HTML 7Page - NXP Semiconductors  
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1996 May 24
2
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD13 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
™(1) technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
MARKING
TYPE NUMBER
MARKING CODE
BYD13D
13D PH
BYD13G
13G PH
BYD13J
13J PH
BYD13K
13K PH
BYD13M
13M PH
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD13D
−
200
V
BYD13G
−
400
V
BYD13J
−
600
V
BYD13K
−
800
V
BYD13M
−
1000
V
VRWM
crest working reverse voltage
BYD13D
−
200
V
BYD13G
−
400
V
BYD13J
−
600
V
BYD13K
−
800
V
BYD13M
−
1000
V
VR
continuous reverse voltage
BYD13D
−
200
V
BYD13G
−
400
V
BYD13J
−
600
V
BYD13K
−
800
V
BYD13M
−
1000
V



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