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STS9NH3LL Fiches technique(PDF) 1 Page - STMicroelectronics |
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STS9NH3LL Fiches technique(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() July 2006 Rev 1 1/12 12 STS9NH3LL N-channel 30V - 0.018 Ω - 9A - SO-8 Low gate charge STripFET™ III Power MOSFET General features ■ Optimal RDS(on) x Qg trade-off @ 4.5V ■ Conduction losses reduced ■ Switching losses reduced Description This application specific Power MOSFET is the third generation of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. Applications ■ Switching application Internal schematic diagram Type VDSS RDS(on) ID STS9NH3LL 30V 0.022 Ω 9A SO-8 www.st.com Order codes Part number Marking Package Packaging STS9NH3LL S9NH3LL SO-8 Tape & reel |
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