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BC337 Fiches technique(PDF) 1 Page - Unisonic Technologies

No de pièce BC337
Description  SWITCHING AND AMPLIFIER APPLICATIONS
PDF  2 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

BC337 Fiches technique(HTML) 1 Page - Unisonic Technologies

  BC337 Datasheet HTML 1Page - Unisonic Technologies BC337 Datasheet HTML 2Page - Unisonic Technologies  
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UTC BC337/338
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R201-039,B
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
*Suitable for AF-Driver stages and low power output
stages
*Complement to BC327/328
TO-92
1
1: COLLECTOR 2: BASE 3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector-emitter voltage
: BC337
: BC338
VCES
50
30
V
V
Collector-emitter voltage
: BC337
: BC338
VCEO
45
25
V
V
Emitter-base voltage
VEBO
5
V
Collector current (DC)
Ic
800
mA
Collector dissipation
Pc
625
mW
Junction Temperature
Tj
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-emitter breakdown voltage
: BC337
: BC338
BVCEO
Ic=10mA, IB=0
45
25
V
V
Collector-emitter breakdown voltage
: BC337
: BC338
BVCES
Ic=0.1mA, VBE=0
50
30
V
V
Emitter-base breakdown voltage
BVEBO
IE=0.1mA, Ic=0
5
V
Collector Cut-off Current
: BC337
: BC338
ICES
VCE=45V, IB=0
VCE=25V, IB=0
2
2
100
100
nA
nA
DC current gain
hFE1
hFE2
VCE=1V, Ic=100mA
VCE=1V, Ic=300mA
100
60
630
Collector-emitter saturation voltage
VCE(sat)
Ic=500mA, IB=50mA
0.7
V


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