2SD1857

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

QW-R201-057,C

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

120

V

Collector-Emitter Voltage

120

V

Emitter-Base Voltage

5

V

Collector Power Dissipation

1

W

Collector Current

2

A

Collector Current

3

A

Junction Temperature

+150

℃

Storage Temperature

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

120

V

Collector-Emitter Breakdown Voltage

120

V

Emitter-Base Breakdown Voltage

5

V

Collector Cut-off Current

1

µA

Emitter Cut-off Current

1

µA

DC Current Transfer Ratio

82

390

Collector-Emitter Saturation Voltage

0.4

V

Transition Frequency

80

MHz

Output Capacitance

20

pF

Note: Measured using pulse current.

RANK

P

Q

R

RANGE

82-180

120-270

180-390

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.