UTCKSC945

NPNEPITAXIAL SILICON TRANSISTOR

2

QW-R201-060,A

CLASSIFICATION OF hFE

RANK

R

O

Y

G

L

RANGE

40-80

70-140

120-240

200-400

350-700

TYPICAL PERFORMANCE CHARACTERISTICS

Fig.1 Static characteristics

Collector-Emitter voltage ( V)

04

8

12

16

20

0

20

40

60

80

100

Fig.2 DC current Gain

Ic,Collector current (mA)

10

2

10

1

10

0

10

3

10

3

10

2

10

1

10

0

10

-1

Fig.3 Base-Emitter on Voltage

10

-1

10

0

10

1

10

2

Base-Emitter voltage (V)

0

0.2

0.4

0.6

0.8

1.0

Ic,Collector current (mA)

10

3

10

2

10

1

10

0

10

-1

10

1

10

2

10

3

10

4

Fig.4 Saturation voltage

Fig.5 Current gain-bandwidth

product

Fig.6 Collector output

Capacitance

Ic,Collector current (mA)

10

0

10

1

10

2

10

3

10

0

10

1

10

2

Collector-Base voltage (V)

10

0

10

1

10

2

10

0

10

1

10

2

10

3

f=1MHz

µA

µA

µA

µA

µA

µA

10

-1

10

-1

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.