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MC74HC157AD Fiches technique(PDF) 4 Page - ON Semiconductor

No de pièce MC74HC157AD
Description  Quad 2?묲nput Data Selectors / Multiplexers
PDF  10 Pages
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC74HC157AD Fiches technique(HTML) 4 Page - ON Semiconductor

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MC74HC157A
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DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Unit
v 125_C
v 85_C
– 55 to
25
_C
VCC
V
Test Conditions
Parameter
Symbol
VOL
Maximum Low−Level Output
Voltage
Vin = VIL
|Iout| v 20 mA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIL
|Iout| v 2.4 mA
|Iout| v 6.0 mA
|Iout| v 7.8 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.4
0.4
0.4
Iin
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
mA
IOZ
Maximum Three−State Leakage
Current
Output in High−Impedance State
Vin = VIL or VIH
Vout = VCC or GND
6.0
± 0.5
± 5.0
± 10
mA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 mA
6.0
4.0
40
160
mA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)
Symbol
Parameter
VCC
V
Guaranteed Limit
Unit
– 55 to
25
_C
v 85_C
v 125_C
tPLH,
tPHL
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 4)
2.0
3.0
4.5
6.0
105
65
21
18
130
85
26
22
160
115
32
27
ns
tPLH,
tPHL
Maximum Propagation Delay, Select to Output Y
(Figures 2 and 4)
2.0
3.0
4.5
6.0
110
70
22
19
140
90
28
24
165
115
33
28
ns
tPLH,
tPHL
Maximum Propagation Delay, Output Enable to Output Y
(Figures 3 and 4)
2.0
3.0
4.5
6.0
100
60
20
17
125
80
25
21
150
110
30
26
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 4)
2.0
3.0
4.5
6.0
75
27
15
13
95
32
19
16
110
36
22
19
ns
Cin
Maximum Input Capacitance
−
10
10
10
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
CPD
Power Dissipation Capacitance (Per Package)*
Typical @ 25
°C, VCC = 5.0 V
pF
33
* Used to determine the no−load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).



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