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DTA123E-AL3-6-R Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce DTA123E-AL3-6-R
Description  DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS)
PDF  3 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

DTA123E-AL3-6-R Fiches technique(HTML) 2 Page - Unisonic Technologies

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DTA123E
PNP EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R206-086,A
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
VCC
-50
V
Input Voltage
VIN
-12 ~ +10
V
Output Current
IOUT
-100
mA
SOT-523
150
mW
Power Dissipation
SOT-23/SOT-323
PD
200
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS (Ta=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN(OFF)
VCC =-5V, IOUT =-100µA
-0.5
Input Voltage
VIN(ON)
VOUT =-0.3V, IOUT =-20mA
-3
V
Output Voltage
VOUT(ON) IOUT/IIN =10mA/-0.5mA
-0.1
-0.3
V
Input Current
IIN
VIN=-5V
-3.8
mA
Output Current
IOUT(OFF) VCC =-50V, VIN =0V
-0.5
µA
DC Current Gain
GIN
VOUT =-5V, IOUT =-20mA
20
Input Resistance
R1
1.54
2.2
2.86
KΩ
Resistance Ratio
R2/R1
0.8
1
1.2
Transition Frequency
fT
VCE =-10V, IE =−5mA, f=100MHz *
250
MHz
* Transition frequency of the device



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