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MMBTA42L-AE3-R Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce MMBTA42L-AE3-R
Description  HIGH VOLTAGE RANSISTOR
PDF  4 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MMBTA42L-AE3-R Fiches technique(HTML) 2 Page - Unisonic Technologies

  MMBTA42L-AE3-R Datasheet HTML 1Page - Unisonic Technologies MMBTA42L-AE3-R Datasheet HTML 2Page - Unisonic Technologies MMBTA42L-AE3-R Datasheet HTML 3Page - Unisonic Technologies MMBTA42L-AE3-R Datasheet HTML 4Page - Unisonic Technologies  
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MMBTA42
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-004,C
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
6
V
Collector Dissipation (TA=25℃)
PC
350
mW
Collector Current
IC
500
mA
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
J=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
Ic=100
μA, I
E=0
300
V
Collector-Emitter Breakdown Voltage
BVCEO
Ic=1mA, IB=0
300
V
Emitter-Base Breakdown Voltage
BVEBO
IE=100μA, Ic=0
6
V
Collector-Emitter Saturation Voltage
VCE(SAT)
Ic=20mA, IB=2mA
0.2
V
Base-Emitter Saturation Voltage
VBE(SAT)
Ic=20mA, IB=2mA
0.90
V
Collector Cut-Off Current
ICBO
VCB=200V, IE=0
100
nA
Emitter Cut-Off Current
IEBO
VBE=6V, Ic=0
100
nA
DC Current Gain
hFE
VCE=10V, Ic=1mA
VCE=10V, Ic=10mA
VCE=10V, Ic=30mA
80
80
80
300
Current Gain Bandwidth Product
fT
VCE=20V, Ic=10mA, f=100MHz
50
MHz
Collector Base Capacitance
Ccb
VCB=20V, IE=0, f=1MHz
3
pF



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