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DAP222G Fiches technique(PDF) 2 Page - ON Semiconductor |
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DAP222G Fiches technique(HTML) 2 Page - ON Semiconductor |
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2 / 5 page ![]() DAP222, DAP202U http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current IR VR = 70 V − 0.1 mAdc Forward Voltage VF IF = 100 mA − 1.2 Vdc Reverse Breakdown Voltage VR IR = 100 mA 80 − Vdc Diode Capacitance CD VR = 6.0 V, f = 1.0 MHz − 3.5 pF Reverse Recovery Time DAP222 DAP202U trr(2) ttt(3) IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR IF = 5.0 mA, VR = 6.0 V, RL = 50 W, Irr = 0.1 IR − − 4.0 10.0 ns 1. t = 1 mS 2. trr Test Circuit for DAP222 in Figure 4. 3. trr Test Circuit for DAP202U in Figure 5. TYPICAL ELECTRICAL CHARACTERISTICS 100 0.2 0.4 VF, FORWARD VOLTAGE (VOLTS) 0.6 0.8 1.0 1.2 10 1.0 0.1 10 0 VR, REVERSE VOLTAGE (VOLTS) 1.0 0.1 0.01 0.001 10 20 30 40 50 1.75 0 VR, REVERSE VOLTAGE (VOLTS) 1.5 1.25 1.0 0.75 24 6 8 Figure 1. Forward Voltage Figure 2. Reverse Current Figure 3. Diode Capacitance TA = 150°C TA = 125°C TA = 85°C TA = 55°C TA = 25°C TA = 85°C TA = −40°C TA = 25°C |
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