| Moteur de recherche de fiches techniques de composants électroniques |
|
STB85NF3LLT4 Fiches technique(PDF) 5 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STB85NF3LLT4 Fiches technique(HTML) 5 Page - STMicroelectronics |
|
5 / 13 page ![]() STB85NF3LL Electrical characteristics 5/13 Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 85 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 340 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 85A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 85A, di/dt = 100A/µs, VDD = 15V, TJ = 150°C Figure 14 on page 8 65 105 3.4 ns µC A |
|
|
Lien URL |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Lien vers la fiche technique | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |