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BUL804 Fiches technique(PDF) 1 Page - STMicroelectronics |
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BUL804 Fiches technique(HTML) 1 Page - STMicroelectronics |
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1 / 10 page ![]() May 2006 Rev 2 1/10 10 Order codes Part Number Marking Package Packing BUL804 BUL804 TO-220 Tube BUL804 High voltage fast-switching NPN Power Transistor General features ■ NPN Transistor ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ In compliance with the 2002/93/EC European Directive Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use as PFC in high frequency ballast half Bridge voltage fed topology. Applications ■ Electronic ballast for fluorescent lighting ■ Dedicated for PFC solution in half-bridge voltage fed topology. Internal schematic diagram TO-220 1 2 3 www.st.com |
Numéro de pièce similaire - BUL804_06 |
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Description similaire - BUL804_06 |
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