BUL705 datasheet(1/11 Pages) STMICROELECTRONICS

No de pièce	BUL705

Description	High voltage fast-switching NPN Power Transistor

PDF	11 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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1 / 11 page

May 2006

Rev 1

1/11

11

Order codes

Part Number

Marking

Package

Packing

BUL705

TO-220

Tube

BUL705

High voltage fast-switching NPN Power Transistor

General features

■

NPN Transistor

■

High voltage capability

■

Low spread of dynamic parameters

■

Minimum lot-to-lot spread for reliable operation

■

Very high switching speed

■

Fully characterized at 125 °C

■

In compliance with the 2002/93/EC European

Directive

Description

The device is manufactured using high voltage

Multi-Epitaxial

Planar

technology

for

high

switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

Applications

■

Electronic ballast for fluorescent lighting

■

Dedicated for PFC solution in HF ballast half-

bridge voltage fed

Internal schematic diagram

TO-220

1

2

3

www.st.com

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