BDX53BFP datasheet(1/4 Pages) STMICROELECTRONICS

No de pièce	BDX53BFP

Description	SILICON POWER DARLINGTON TRANSISTOR

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BDX53BFP

SILICON POWER DARLINGTON TRANSISTOR

APPLICATIONS:

s

GENERAL PURPOSE SWITCHING AND

AMPLIFIER

s

LINEAR AND SWITCHING INDUSTRIAL

EQUIPMENT

s

FULLY INSULATED PACKAGE (U.L.

COMPLIANT) FOR EASY MOUNTING

DESCRIPTION

The BDX53BFP is a silicon Epitaxial-Base NPN

power

transistor

in

monolithic

Darlington

configuration mounted in T0-220FP fully molded

isolated package. It is intented for use in hammer

drivers, audio amplifiers and other medium power

linear and switching applications.

INTERNAL SCHEMATIC DIAGRAM

February 2003

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage (IE = 0)

80

V

VCEO

Collector-Emitter Voltage (IB = 0)

80

V

VEBO

Emitter-base Voltage (IC = 0)

5

V

IC

Collector Current

8

A

ICM

Collector Peak Current (repetitive)

12

A

IB

Base Current

0.2

A

Ptot

Total Dissipation at Tc

≤ 25 oC

29

W

Visol

Insulation Withstand Voltage (RMS) from All

Three Leads to External Heatsink

1500

V

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

1

2

3

T0-220FP

R1 Typ. = 10 K

Ω

R2 Typ. = 150

Ω

®

1/4

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