UT3415

POWER MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 9

www.unisonic.com.tw

QW-R210-074.C



ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-20

V

Gate-Source Voltage

VGSS

±8

V

Drain Current

DC

ID

-4

A

Pulsed (Note 2)

IDM

-8

A

Single Avalanche Energy (Note 3)

EAS

48

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

1.38

V/ns

Power Dissipation

SOT-23

PD

0.7

W

SOT-26

0.6

W

SOP-8

1

W

Junction Temperature

TJ

+150

°C

Storage Temperature Range

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. L=0.1mH, IAS=-31.1A, VDD= -20V, RG=25Ω, Starting TJ=25°C.

4. ISD ≤-1.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

SOT-23

θJA

177

°C/W

SOT-26

208

°C/W

SOP-8

125

°C/W

Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.