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B2D10065K Fiches technique(PDF) 1 Page - BASIC SEMICONDUCTOR |
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B2D10065K Fiches technique(HTML) 1 Page - BASIC SEMICONDUCTOR |
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1 / 7 page ![]() 2 1 B2D10065K SiC Schottky Diode V RRM 650 V 10 A 29 nC I F (TC=160°C) Q C Package: TO-220-2 Product Summary 2 1 backside 1 / 7 www.basicsemi.com Electrical Connection Pin1 and backside - Cathode Pin2 - Anode Package Pin Definitions Features Benefits Low leakage current (I R) Zero reverse recovery current Temperature independent switching behavior Positive temperature coefficient on V F High surge current capacity Low capacitive charge System cost savings due to smaller magnetics System efficiency improvement over Si diodes Reduction of heat sink requirements Switch mode power supplies (SMPS) Uninterruptible power supplies Server/telecom power supplies Power factor correction Solar Enabling higher frequency Reduced EMI Applications Package Parameters Part Number Marking Package B2D10065K B2D10065K TO-220-2 Packing Quantities Tube Packing PCS/Tube Tube/Box PCS/Box 10 500 50 TO-220-2 Rev. 0.3 |
Numéro de pièce similaire - B2D10065K |
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Description similaire - B2D10065K |
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