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B40C800DM Fiches technique(PDF) 3 Page - Vishay Siliconix

No de pièce B40C800DM
Description  Glass Passivated Ultrafast Bridge Rectifier
PDF  4 Pages
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

B40C800DM Fiches technique(HTML) 3 Page - Vishay Siliconix

  B40C800DM Datasheet HTML 1Page - Vishay Siliconix B40C800DM Datasheet HTML 2Page - Vishay Siliconix B40C800DM Datasheet HTML 3Page - Vishay Siliconix B40C800DM Datasheet HTML 4Page - Vishay Siliconix  
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Document Number 88533
09-Oct-06
www.vishay.com
3
B40C800DM thru B380C800DM
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 4. Typical Forward Characteristics Per Diode
0
10
100
0
10
20
30
40
50
1.0 Cycle
Number of Cycles at 50 Hz
Tj = 125 °C
10 ms Single Sine-Wave
0.4
0.8
1.2
10
1
0.1
0.01
0.6
1.0
1.4
Tj = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Figure 5. Typical Reverse Leakage Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
0
20
40
60
80
100
0.01
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
Tj = 100 °C
Tj = 25 °C
1
10
100
1
10
100
Tj = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Reverse Voltage (V)
0.315 (8.00)
0.285 (7.24)
0.013 (3.3)
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
0.255 (6.5)
0.245 (6.2)
0.335 (8.51)
0.320 (8.12)
0.045 (1.14)
0.035 (0.89)
0.080 (2.03)
0.050 (1.27)
0.023 (0.58)
0.018 (0.46)
0.185 (4.69)
0.150 (3.81)
0.130 (3.3)
0.120 (3.05)
0.075 (1.90)
0.055 (1.39)
0.205 (5.2)
0.195 (5.0)
Case Style DFM



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