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AS4CM4EOQ Fiches technique(PDF) 7 Page - Alliance Semiconductor Corporation

No de pièce AS4CM4EOQ
Description  4M X 4 CMOS Quad CAS DRAM (EDO) family
PDF  16 Pages
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Fabricant  ALSC [Alliance Semiconductor Corporation]
Site Internet  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4CM4EOQ Fiches technique(HTML) 7 Page - Alliance Semiconductor Corporation

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AS4C4M4EOQ
AS4C4M4E1Q
3/22/01; v.1.0
Alliance Semiconductor
P. 7 of 16
Write cycle
Read-modify-write cycle
Refresh cycle
Symbol Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tWCS
Write command setup time
0
–
0
–
ns
11
tWCH
Write command hold time
10
–
10
–
ns
11
tWP
Write command pulse width
10
–
10
–
ns
tRWL
Write command to RAS lead time
10
–
10
–
ns
tCWL
Write command to CAS lead time
8
–
10
–
ns
tDS
Data-in setup time
0
–
0
–
ns
12
tDH
Data-in hold time
8
–
10
–
ns
12
Symbol Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tRWC
Read-write cycle time
113
–
135
–
ns
tRWD
RAS to WE delay time
67
–
77
–
ns
11
tCWD
CAS to WE delay time
32
–
35
–
ns
11
tAWD
Column address to WE delay time
42
–
47
–
ns
11
Symbol Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tCSR
CAS setup time (CAS-before-RAS)5
–
5
–
ns
3
tCHR
CAS hold time (CAS-before-RAS)8
–
10
–
ns
3
tRPC
RAS precharge to CAS hold time
0
–
0
–
ns
tCPT
CAS precharge time
(CBR counter test)
10
10
–
ns



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