BC141-16 datasheet(2/5 Pages) STMICROELECTRONICS

No de pièce	BC141-16

Description	GENERAL PURPOSE TRANSISTOR

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

35

200

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 60 V

TC = 150

oC

100

nA

µA

V(BR)CBO

∗ Collector-Base

Breakdown Voltage

(IE = 0)

IC = 100

µA

100

V

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = 30 mA

60

V

V(BR)EBO

∗ Emitter-Base

Breakdown Voltage

(IC = 0)

IE = 100

µA

7V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 100 mA

IB = 10 mA

IC = 500 mA

IB = 50 mA

IC = 1 A

IB = 100 mA

0.1

0.35

0.6

1

V

VBE(on)

∗ Base-Emitter On

Voltage

IC = 1 A

VCE = 1 V

1.25

1.8

V

hFE

∗

DC Current Gain

IC = 100

µA

VCE = 1 V

IC = 100 mA

VCE = 1 V

IC = 1 A

VCE = 1 V

100

90

160

30

250

fT

Transition Frequency

IC = 50 mA

VCE = 10 V

50

MHz

CCBO

Collector-Base

Capacitance

IE = 0

VCB = 5 V

f = 1MHz

12

25

pF

ton

Turn-on Time

IC = 100 mA

IB1 = 5 mA

250

ns

toff

Turn-off Time

IC = 100 mA

IB1 = IB2 = 5 mA

850

ns

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %

BC141-16

2/5

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