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MASTERGAN2TR Fiches technique(PDF) 6 Page - STMicroelectronics |
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MASTERGAN2TR Fiches technique(HTML) 6 Page - STMicroelectronics |
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6 / 29 page ![]() 4 Electrical characteristics 4.1 Driver Table 5. Driver electrical characteristics VCC = PVCC = 6 V; SENSE = GND; TJ = 25°C, unless otherwise specified (each voltage referred to GND unless otherwise specified) Symbol Parameter Test condition Min Typ Max Unit Logic section supply VCCthON VCC vs. GND VCC UV turn ON threshold (1) 4.2 4.5 4.75 V VCCthOFF VCC UV turn OFF threshold(1) 3.9 4.2 4.5 V VCChys VCC UV hysteresis(1) 0.2 0.3 0.45 V IQVCCU VCC undervoltage quiescent supply current VCC = PVCC = 3.8 V 320 410 μA IQVCC VCC quiescent supply current SD/OD = LIN = 5 V; HIN = 0 V; BOOT = 7 V 680 900 μA ISVCC VCC switching supply current SD/OD = 5 V; VBO = 6.5 V; VS = 0 V; FSW = 500 kHz 0.8 mA Low-side driver section supply IQPVCC PVCC vs. PGND PVCC quiescent supply current SD/OD = LIN = 5 V 150 μA ISPVCC PVCC switching supply current VS = 0 V FSW = 500 kHz 1.4 mA RBLEED GL vs. PGND Low side gate bleeder PVCC = PGND 75 100 125 kΩ RONL Low side turn on resistance (2) I(GL) = 1 mA (source) 52 Ω ROFFL Low side turn off resistance(2) I(GL) = 1 mA (sink) 2 Ω High-side floating section supply VBOthON BOOT vs. OUTb VBO UV turn ON threshold (3) 3.6 4.0 4.4 V VBOthOFF VBO UV turn OFF threshold(3) 3.4 3.7 4.0 V VBOhys VBO UV hysteresis(3) 0.1 0.3 0.5 V IQBOU VBO undervoltage quiescent supply current(3) VBO = 3.4 V 140 200 μA IQBO VBO quiescent supply current(3) VBO = 6 V; LIN = GND; SD/OD = HIN = 5 V; 217 μA ISBO BOOT BOOT switching supply current VBO = 6 V; SD/OD = 5 V; VS = 0 V; FSW = 500 kHz 1.9 mA ILK BOOT vs. SGND High voltage leakage current BOOT = OUT = 600 V 11 μA RDBoot VCC vs. BOOT Bootstrap diode on resistance (4) SD/OD = LIN = 5 V; HIN = GND = PGND VCC – BOOT = 0.5 V 140 175 Ω RONH High side turn on resistance(2) I(GH) = 1 mA (source) 77 Ω ROFFH High side turn off resistance(2) I(GH) = 1 mA (sink) 2 Ω MASTERGAN2 Electrical characteristics DS13597 - Rev 2.0 page 6/29 |
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