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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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2SD780 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD780 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  isc website： www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SD780 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO= 60V(Min.) · High Reliability · Low Collector Saturation Voltage · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · High ruggedness electronic ignitions · High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter peak Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.3 A PT Total Power Dissipation @Ta=25℃ 0.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Numéro de pièce similaire - 2SD780 |
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Description similaire - 2SD780 |
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