IXTP50N20P datasheet(4/5 Pages) IXYS

4 / 5 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA 50N20P IXTP 50N20P

IXTQ 50N20P

IXYS MOSFETs and IGBTs are covered by one or more

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

6,404,065B1 6,162,665

6,534,343

6,583,505

of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

6,259,123B1 6,306,728B1 6,683,344

Fig . 7. In put A d m ittance

567

V G S - V olts

TJ = 150ºC

25ºC

-40ºC

Fig. 8. Tr an s conductance

20406080

100

120

I D - A mperes

TJ = -40ºC

25ºC

150ºC

Fig. 9. Sour ce Cur r e nt vs .

So u r ce -To-Dr ain V o ltag e

100

125

150

0.4

0.6

0. 8

1. 2

1. 4

V S D - V olts

TJ = 150ºC

TJ = 25ºC

Fig . 10. Gate C h ar g e

102030

40506070

Q G - nanoCoulombs

V DS = 100V

I D = 25A

I G = 10m A

Fig . 11. Cap acitan ce

100

1000

10000

V D S - V olts

C is s

C os s

C rss

f = 1MH z

Fig . 12. Fo r w ar d -Bias

Safe Op er atin g A r ea

100

1000

100

1000

V D S - V olts

100µs

1m s

TJ = 175ºC

TC = 25ºC

R D S(on) Lim it

10m s

25µs

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