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GTRA184602FC-V1-R2 Fiches technique(PDF) 2 Page - WOLFSPEED, INC.

No de pièce GTRA184602FC-V1-R2
Description  Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz
PDF  9 Pages
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Fabricant  WOLFSPEED [WOLFSPEED, INC.]
Site Internet  https://www.wolfspeed.com/
Logo WOLFSPEED - WOLFSPEED, INC.

GTRA184602FC-V1-R2 Fiches technique(HTML) 2 Page - WOLFSPEED, INC.

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GTRA184602FC
2
Rev. 03, 2023-03-02
© 2023 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc.
The information in this document is subject to change without notice.
4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300
DC Characteristics
Recommended Operating Conditions
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-source Voltage
V
DSS
125
V
Gate-Source Voltage
V
GS
–10 to +2
Operating Voltage
V
DD
55
Gate Current (main)
I
G
20
mA
Gate Current (peak)
38
Drain Current (main)
I
D
7.5
A
Drain Current (peak)
14.4
Junction Temperature
T
J
225
°C
Storage Temperature Range
T
STG
–65 to +150
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Conditions
Drain-source Breakdown Voltage (main)
V
BR(DSS)
150
—
—
V
V
GS = -8 V, ID = 10 mA
Drain-source Breakdown Voltage (peak)
Drain-source Leakage Current
I
DSS
—
—
5.5
mA
V
GS = -8 V, VDS = 10 V
Gate Threshold Voltage (main)
V
GS(th)
–3.8
–3.0
–2.3
V
V
DS = -10 V, ID = 20 mA
Gate Threshold Voltage (peak)
V
DS = -10 V, ID = 38 mA
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Drain Operating Voltage
V
DD
0
—
50
V
Gate Quiescent Voltage
V
GS(Q)
–3.9
–3.0
-2.1
V
DS = 48 V, ID = 150 mA
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these
values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V
DD) specified above.
RF Characteristics, 1805 MHz
Single-carrier WCDMA Specifications (notsubjecttoproductiontest.Verifiedbydesign/characterizationinproductiontestcircuit)
V
DD = 48 V, IDQ = 150 mA, POUT = 80 W avg, VGS(PEAK) = –5.5 V, ƒ = 1805 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Symbol
Min.
Max.
Unit
Gain
G
ps
14.5
—
dB
Drain Efficiency
h
D
52
—
%
Adjacent Channel Power Ratio
ACPR
—
–23.5
dBc
Output PAR @ 0.01% CCDF
OPAR
6.5
—
dB



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