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BT136F Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BT136F Fiches technique(HTML) 2 Page - NXP Semiconductors |
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2 / 7 page ![]() Philips Semiconductors Product specification Triacs BT136F series ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V three terminals to external heatsink C isol Capacitance from T2 to external f = 1 MHz - 12 - pF heatsink THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-hs Thermal resistance full or half cycle junction to heatsink with heatsink compound - - 5.5 K/W without heatsink compound - - 7.2 K/W R th j-a Thermal resistance in free air - 55 - K/W junction to ambient STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BT136F- ... ...F ...G I GT Gate trigger current V D = 12 V; IT = 0.1 A T2+ G+ - 5 35 25 50 mA T2+ G- - 8 35 25 50 mA T2- G- - 11 35 25 50 mA T2- G+ - 30 70 70 100 mA I L Latching current V D = 12 V; IGT = 0.1 A T2+ G+ - 7 20 20 30 mA T2+ G- - 16 30 30 45 mA T2- G- - 5 20 20 30 mA T2- G+ - 7 30 30 45 mA I H Holding current V D = 12 V; IGT = 0.1 A - 5 15 15 30 mA V T On-state voltage I T = 5 A - 1.4 1.70 V V GT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.7 1.5 V V D = 400 V; IT = 0.1 A; 0.25 0.4 - V T j = 125 ˚C I D Off-state leakage current V D = VDRM(max); - 0.1 0.5 mA T j = 125 ˚C February 1996 2 Rev 1.100 |
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