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BT136F Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce BT136F
Description  Triacs
PDF  7 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BT136F Fiches technique(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Triacs
BT136F series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
≤ 65% ; clean and dustfree
-
1500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
12
-
pF
heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance
full or half cycle
junction to heatsink
with heatsink compound
-
-
5.5
K/W
without heatsink compound
-
-
7.2
K/W
R
th j-a
Thermal resistance
in free air
-
55
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BT136F-
...
...F
...G
I
GT
Gate trigger current
V
D = 12 V; IT = 0.1 A
T2+ G+
-
5
35
25
50
mA
T2+ G-
-
8
35
25
50
mA
T2- G-
-
11
35
25
50
mA
T2- G+
-
30
70
70
100
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
T2+ G+
-
7
20
20
30
mA
T2+ G-
-
16
30
30
45
mA
T2- G-
-
5
20
20
30
mA
T2- G+
-
7
30
30
45
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
5
15
15
30
mA
V
T
On-state voltage
I
T = 5 A
-
1.4
1.70
V
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.7
1.5
V
V
D = 400 V; IT = 0.1 A;
0.25
0.4
-
V
T
j = 125 ˚C
I
D
Off-state leakage current
V
D = VDRM(max);
-
0.1
0.5
mA
T
j = 125 ˚C
February 1996
2
Rev 1.100



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