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2SA1546X Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1546X Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() isc website: www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA1546X DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO= 300V(Min) · · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current-Continuous 0.5 A PT Total Power Dissipation @TC=25℃ 0.6 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Numéro de pièce similaire - 2SA1546X |
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