BUL310 datasheet(1/7 Pages) STMICROELECTRONICS

No de pièce	BUL310

Description	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

PDF	7 Pages

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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BUL310

BUL310PI

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTORS

s

SGS-THOMSON PREFERRED SALESTYPES

s

NPN TRANSISTOR

s

HIGH VOLTAGE CAPABILITY

s

LOW SPREAD OF DYNAMIC PARAMETERS

s

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

s

VERY HIGH SWITCHING SPEED

s

FULLY CHARACTERISED AT 125

oC

s

LARGE RBSOA

s

U.L. RECOGNISED ISOWATT220 PACKAGE

(U.L. FILE # E81734 (N)):

ISOLATION VOLTAGE 1500VRMS

APPLICATIONS

s

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

s

FLYBACK AND FORWARD SINGLE

TRANSISTOR LOW POWER CONVERTERS

DESCRIPTION

The BUL310 and BUL310PI are manufactured

using

high

voltage

Multi

Epitaxial

Planar

technology for high switching speeds and high

voltage capability. They use a Cellular Emitter

structure with planar edge termination to enhance

switching speeds while maintaining a

wide

RBSOA.

The BUL series is designed for use in lighting

applications and low cost switch-mode power

supplies.

INTERNAL SCHEMATIC DIAGRAM

September 1997

1

2

3

TO-220

ISOWATT220

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Uni t

BUL 310

BUL310PI

VCES

Collector-Emit ter Voltage (VBE = 0)

1000

V

VCEO

Collector-Emit ter Voltage (IB = 0)

500

V

VEBO

Emitter-Base Voltage (IC =0)

9

V

IC

Collector Current

5

V

ICM

Collector Peak Current (tp <5 ms)

10

A

IB

Base Current

3

A

IBM

Base Peak Current (tp <5 ms)

4

A

Ptot

Tot al Dissipation at T c = 25

oC75

35

W

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. O perat ing Junction Temperature

150

oC

1/7

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STMicroelectronics	BUL310	64Kb / 6P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Jan-1999
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