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NCV7708 Fiches technique(PDF) 14 Page - ON Semiconductor

No de pièce NCV7708
Description  Double Hex Driver
PDF  16 Pages
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NCV7708 Fiches technique(HTML) 14 Page - ON Semiconductor

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Cu_Area = 986 mm2 1 oz 1 S
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.01
Figure 10. SOIC 28−Lead Thermal Duty Cycle Curves on 1
, Spreader Test Board
100
10
1.0
0.1
0.01
PULSE DURATION (sec)
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
SOIC 28−lead Thermal RC Network Models
239 mm2
986 mm2
239 mm2
986 mm2
Cu
Area
Cauer Network
Foster Network
C’s
C’s
Units
Tau
Tau
Units
2.68E−05
2.68E−05
W−s/C
1.00E−06
1.00E−06
sec
1.02E−04
1.02E−04
W−s/C
1.00E−05
1.00E−05
sec
2.82E−04
2.84E−04
W−s/C
1.00E−04
1.00E−04
sec
9.58E−04
9.73E−04
W−s/C
5.00E−04
5.00E−04
sec
2.72E−03
2.63E−03
W−s/C
1.00E−03
1.00E−03
sec
2.02E−03
1.95E−03
W−s/C
1.00E−02
1.00E−02
sec
2.93E−02
3.12E−02
W−s/C
8.00E−02
8.00E−02
sec
0.116
0.091
W−s/C
4.00E−01
4.00E−01
sec
0.16
0.21
W−s/C
2.00E+00
2.00E+00
sec
1
1
W−s/C
6.00E+01
5.50E+01
sec
R’s
R’s
R’s
R’s
0.048
0.048
°C/W
2.84E−02
2.84E−02
°C/W
0.115
0.115
°C/W
6.14E−02
6.14E−02
°C/W
0.352
0.349
°C/W
1.94E−01
1.94E−01
°C/W
0.777
0.776
°C/W
0.100
0.100
°C/W
0.599
0.630
°C/W
0.500
0.480
°C/W
1.677
1.667
°C/W
1.839
1.933
°C/W
2.968
3.151
°C/W
2.207
1.836
°C/W
6.424
5.527
°C/W
1.249
2.291
°C/W
6.940
6.689
°C/W
8.225
8.000
°C/W
53.503
36.970
°C/W
59.000
41.000
°C/W
Bold face items in the Cauer network above, represent the package without the external thermal system. The Bold face items
in the Foster network are computed by the square root of time constant R(t) = 28.4 * sqrt(time(sec)). The constant is derived
based on the active area of the device with silicon and epoxy at the interface of the heat generation.



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