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NCV7708 Fiches technique(PDF) 14 Page - ON Semiconductor |
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NCV7708 Fiches technique(HTML) 14 Page - ON Semiconductor |
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14 / 16 page ![]() NCV7708 http://onsemi.com 14 Cu_Area = 986 mm2 1 oz 1 S D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.01 Figure 10. SOIC 28−Lead Thermal Duty Cycle Curves on 1 , Spreader Test Board 100 10 1.0 0.1 0.01 PULSE DURATION (sec) 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 SOIC 28−lead Thermal RC Network Models 239 mm2 986 mm2 239 mm2 986 mm2 Cu Area Cauer Network Foster Network C’s C’s Units Tau Tau Units 2.68E−05 2.68E−05 W−s/C 1.00E−06 1.00E−06 sec 1.02E−04 1.02E−04 W−s/C 1.00E−05 1.00E−05 sec 2.82E−04 2.84E−04 W−s/C 1.00E−04 1.00E−04 sec 9.58E−04 9.73E−04 W−s/C 5.00E−04 5.00E−04 sec 2.72E−03 2.63E−03 W−s/C 1.00E−03 1.00E−03 sec 2.02E−03 1.95E−03 W−s/C 1.00E−02 1.00E−02 sec 2.93E−02 3.12E−02 W−s/C 8.00E−02 8.00E−02 sec 0.116 0.091 W−s/C 4.00E−01 4.00E−01 sec 0.16 0.21 W−s/C 2.00E+00 2.00E+00 sec 1 1 W−s/C 6.00E+01 5.50E+01 sec R’s R’s R’s R’s 0.048 0.048 °C/W 2.84E−02 2.84E−02 °C/W 0.115 0.115 °C/W 6.14E−02 6.14E−02 °C/W 0.352 0.349 °C/W 1.94E−01 1.94E−01 °C/W 0.777 0.776 °C/W 0.100 0.100 °C/W 0.599 0.630 °C/W 0.500 0.480 °C/W 1.677 1.667 °C/W 1.839 1.933 °C/W 2.968 3.151 °C/W 2.207 1.836 °C/W 6.424 5.527 °C/W 1.249 2.291 °C/W 6.940 6.689 °C/W 8.225 8.000 °C/W 53.503 36.970 °C/W 59.000 41.000 °C/W Bold face items in the Cauer network above, represent the package without the external thermal system. The Bold face items in the Foster network are computed by the square root of time constant R(t) = 28.4 * sqrt(time(sec)). The constant is derived based on the active area of the device with silicon and epoxy at the interface of the heat generation. |
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