BLW97 datasheet(8/11 Pages) PHILIPS

8 / 11 page

August 1986

Philips Semiconductors

Product speciﬁcation

HF power transistor

BLW97

Fig.9

Intermodulation distortion (see note on

preceding page).

VCE = 28 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz;

f2 = 28,001 MHz; Th =25 °C.

handbook, halfpage

120

240

−80

−20

−60

−40

MGP710

d3, d5

(dB)

PL (W) P.E.P.

typ

Fig.10 Power gain and double-tone efficiency.

VCE = 28 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz;

f2 = 28,001 MHz; Th =25 °C.

handbook, halfpage

120

240

MGP711

(dB)

ηc

(%)

PL (W) P.E.P.

ηc

typ

RUGGEDNESS

The BLW97 is capable of withstanding full load mismatch

(VSWR = 50 through all phases) up to 150 W (P.E.P.) or a

load mismatch (VSWR = 5 through all phases) up to

175 W (P.E.P.) under the following conditions:

VCE = 28 V; f = 28 MHz; Th =25 °C; Rth mb-h = 0,2 K/W.

Figures 11 and 12 t typical curves which are valid for one

transistor of a push-pull amplifier in s.s.b. class-AB

operation.

Fig.11 Power gain.

handbook, halfpage

MGP712

110

102

(dB)

f (MHz)

typ

VCE = 28 V; IC(ZS) = 0,1 A;

PL = 175 W(PEP); Th =25 °C;

ZL = 1,55 Ω

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