August 1986

2

Philips Semiconductors

Product specification

HF/VHF power transistor

BLW50F

DESCRIPTION

N-P-N silicon planar epitaxial

transistor primarily intended for use in

class-A, AB and B operated, industrial

and military transmitters in the h.f.

and v.h.f. band. Resistance

stabilization provides protection

against device damage at severe load

mismatch conditions. Matched

It has a 3/8" flange envelope with a

ceramic cap. All leads are isolated

from the flange.

QUICK REFERENCE DATA

R.F. performance

Note

1. At 65W P.E.P.

MODE OF OPERATION

V

f

MHz

W

dB

%

A

mA

dB

°C

s.s.b. (class-A)

45

1,6 - 28

0 - 16 (P.E.P.)

>

19,5

−

1,2

−<

−40

70

s.s.b. (class-AB)

50

1,6 - 28

10 - 65 (P.E.P.) typ. 18

50

typ.

−30

25

PIN CONFIGURATION

handbook, halfpage

e

c

b

MBB012

Fig.1 Simplified outline and symbol.

halfpage

1

23

4

MSB057

PINNING - SOT123

PIN

DESCRIPTION

1

collector

2

emitter

3

base

4

emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.