BCV29 datasheet(4/8 Pages) NEXPERIA

4 / 8 page

2004 Dec 06

NXP Semiconductors

Product data sheet

NPN Darlington transistors

BCV29; BCV49

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

BCV29

IE = 0 A; VCB = 30 V

−

100

BCV49

IE = 0 A; VCB = 60 V

−

100

IEBO

emitter-base cut-off current

IC = 0 A; VEB = 10 V

−

100

hFE

DC current gain

VCE = 5 V; see Fig.2

BCV29

IC = 1 mA

4000

−

IC = 10 mA

10000

−

IC = 100 mA

20000

−

IC = 500 mA

4000

−

DC current gain

VCE = 5 V; see Fig.2

BCV49

IC = 1 mA

2000

−

IC = 10 mA

4000

−

IC = 100 mA

10000

−

IC = 500 mA

2000

−

VCEsat

collector-emitter saturation voltage IC = 100 mA; IB = 0.1 mA

−

VBEsat

base-emitter saturation voltage

IC = 100 mA; IB = 0.1 mA

−

1.5

VBEon

base-emitter on-state voltage

IC = 10 mA; VCE = 5 V

−

1.4

transition frequency

IC = 30 mA; VCE = 5 V; f = 100 MHz −

220

−

MHz

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