1995 Apr 11

2

Philips Semiconductors

Product specification

UHF power transistor

BLV910

FEATURES

• Internal input matching to achieve high power gain and

easy design of wideband circuits

• Emitter ballasting resistors for an optimum temperature

profile

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Base station transmitters in the 820 to 960 MHz range.

DESCRIPTION

NPN silicon planar epitaxial transistor intended for

common emitter class-AB operation. The transistor is

encapsulated in a 6-lead SOT171 flange envelope with a

ceramic cap. All leads are isolated from the flange.

PINNING - SOT171

PIN

SYMBOL

DESCRIPTION

1

e

emitter

2

e

emitter

3

b

base

4

c

collector

5

e

emitter

6

e

emitter

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM141

Top view

e

c

b

1

2

3

4

5

6

QUICK REFERENCE DATA

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

(%)

CW, class-AB

960

26

10

≥ 11

≥ 55

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.