BLT53 datasheet(4/11 Pages) PHILIPS

4 / 11 page

May 1991

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLT53

CHARACTERISTICS

Tj = 25 °C.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)CBO

collector-base breakdown voltage

open emitter;

IC = 20 mA

−−

V(BR)CEO

collector-emitter breakdown voltage

open base;

IC = 40 mA

−−

V(BR)EBO

emitter-base breakdown voltage

open collector;

IE = 4 mA

−−

ICES

collector-emitter leakage current

VBE = 0;

VCE = 10 V

−−

1mA

hFE

DC current gain

VCE = 5 V;

IC = 1.2 A

−−

transition frequency

VCE = 7.5 V;

IE = 1.6 A

−

3.9

−

GHz

collector capacitance

VCB = 7.5 V;

IE = Ie = 0;

f = 1 MHz

−

Cre

feedback capacitance

VCE = 7.5 V;

IC = 0;

f = 1 MHz

−

Cc-mb

collector-mounting base capacitance

f = 1 MHz

−

1.2

−

Fig.4

DC current gain as a function of collector

current, typical values.

VCE = 5 V.

handbook, halfpage

hFE

IC (A)

MCD194

Fig.5

Collector capacitance as a function of

collector-base voltage, typical values.

IE = ie = 0; f = 1 MHz.

handbook, halfpage

048

(pF)

VCB (V)

MCD195

BLT53 Fiches technique(PDF) 4 Page - NXP Semiconductors

BLT53 Fiches technique(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Fiches technique Télécharger

Lien URL