BLF521 datasheet(10/14 Pages) PHILIPS

10 / 14 page

November 1992

Philips Semiconductors

Product speciﬁcation

UHF power MOS transistor

BLF521

Fig.13 Input impedance as a function of frequency

(series components), typical values per

section.

Class-B operation; VDS = 12.5 V; IDQ = 10 mA;

RGS = 274 Ω;PL =2W.

handbook, halfpage

100

−50

−100

200

f (MHz)

(

Ω)

300

500

400

MDA478

Fig.14 Load impedance as a function of frequency

(series components), typical values.

Class-B operation; VDS = 12.5 V; IDQ = 10 mA;

RGS = 274 Ω;PL =2W.

handbook, halfpage

100

200

300

(

Ω)

f (MHz)

500

400

MDA477

Fig.15 Definition of MOS impedance.

handbook, halfpage

MBA379

Fig.16 Power gain as a function of frequency,

typical values.

Class-B operation; VDS = 12.5 V; IDQ = 10 mA;

RGS = 274 Ω;PL =2W.

handbook, halfpage

100

200

300

(dB)

f (MHz)

500

400

MDA476

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