| Moteur de recherche de fiches techniques de composants électroniques |
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TMUX2889 Fiches technique(PDF) 13 Page - Texas Instruments |
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TMUX2889 Fiches technique(HTML) 13 Page - Texas Instruments |
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13 / 28 page ![]() 7.11 Charge Injection Any mismatch in capacitance results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QC. Figure 7-11 shows the setup used to measure charge injection from Drain (D) to Source (Sx). V DD V DD OUTPUT C L SELx S1A D1 GND 0.1 F V OUT Output V S Q C = CL × V OUT V OUT V SEL V D S1B N.C. 0 V V DD VSEL OUTPUT C L S2A D2 V OUT S2B N.C. Figure 7-11. Charge-Injection Measurement Setup 7.12 Bandwidth Bandwidth is defined as the range of frequencies that are attenuated by less than 3 dB when the input is applied to the source pin (Sx) of an on-channel, and the output is measured at the drain pin (D) of the device. Figure 7-12 shows the setup used to measure bandwidth. GND NETWORK ANALYZER V OUT S D 50 V SIG R L 50 V S V DD 0.1 µF SxA / SxB R L 50 Figure 7-12. Bandwidth Measurement Setup www.ti.com TMUX2889 SCDS464 – JUNE 2023 Copyright © 2023 Texas Instruments Incorporated Submit Document Feedback 13 Product Folder Links: TMUX2889 |
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