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BC337 Fiches technique(PDF) 2 Page - STMicroelectronics |
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BC337 Fiches technique(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() THERMAL DATA Rthj-amb • Rthj-case • Thermal Resistance Junction-Ambient Max Thermal Resistance Junction-Case Max 200 83.3 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = 20 V VCB = 20 V TC = 150 oC 100 5 nA µA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 100 nA V(BR)CBO Collector-Base Breakdown Voltage (IE = 0) IC = 10 µA 50 V V(BR)CEO ∗ Collector-Emitter Breakdown Voltage (IB = 0) IC = 10 mA 45 V V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = 10 µA 5V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 500 mA IB = 50 mA 0.7 V VBE(on) ∗ Base-Emitter On Voltage IC = 500 mA VCE = 1 V 1.2 V hFE ∗ DC Current Gain IC = 100 mA VCE = 1 V for BC337-25 for BC337-40 160 250 400 600 fT Transition Frequency IC = 10 mA VCE = 5 V f = 100MHz 100 MHz CCBO Collector-Base Capacitance IE = 0 VCB = 10 V f = 1 MHz 5 pF ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % BC337-25 / BC337-40 2/4 |
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