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BC337 Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce BC337
Description  SMALL SIGNAL NPN TRANSISTORS
PDF  4 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BC337 Fiches technique(HTML) 2 Page - STMicroelectronics

  BC337 Datasheet HTML 1Page - STMicroelectronics BC337 Datasheet HTML 2Page - STMicroelectronics BC337 Datasheet HTML 3Page - STMicroelectronics BC337 Datasheet HTML 4Page - STMicroelectronics  
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THERMAL DATA
Rthj-amb
Rthj-case
Thermal Resistance Junction-Ambient
Max
Thermal Resistance Junction-Case
Max
200
83.3
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 20 V
VCB = 20 V
TC = 150
oC
100
5
nA
µA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
100
nA
V(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
IC = 10
µA
50
V
V(BR)CEO
∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA
45
V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 10
µA
5V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 500 mA
IB = 50 mA
0.7
V
VBE(on)
∗ Base-Emitter On
Voltage
IC = 500 mA
VCE = 1 V
1.2
V
hFE
DC Current Gain
IC = 100 mA
VCE = 1 V
for BC337-25
for BC337-40
160
250
400
600
fT
Transition Frequency
IC = 10 mA VCE = 5 V f = 100MHz
100
MHz
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V
f = 1 MHz
5
pF
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
BC337-25 / BC337-40
2/4



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