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2SC2655M Fiches technique(PDF) 2 Page - Nanjing International Group Co

No de pièce 2SC2655M
Description  TO-92MOD Plastic-Encapsulate Transistors
PDF  5 Pages
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Fabricant  DGNJDZ [Nanjing International Group Co]
Site Internet  http://www.dgnjdz.com/
Logo DGNJDZ - Nanjing International Group Co

2SC2655M Fiches technique(HTML) 2 Page - Nanjing International Group Co

  2SC2655M Datasheet HTML 1Page - Nanjing International Group Co 2SC2655M Datasheet HTML 2Page - Nanjing International Group Co 2SC2655M Datasheet HTML 3Page - Nanjing International Group Co 2SC2655M Datasheet HTML 4Page - Nanjing International Group Co 2SC2655M Datasheet HTML 5Page - Nanjing International Group Co  
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Dongguan Nanjing Electronics Ltd.
(/(&75,&$/&+$5$&7(5,67,&6
a
T =25
unless otherwise specified
Parameter
Symbol
Test
conditions
M
in
T
yp
Max
U
nit
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=50V,IE=0
1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
1
μA
hFE(1)
VCE=2V,IC=500mA
70
240
DC current gain
hFE(2)
VCE=2V,IC=1.5A
40
Collector-emitter saturation voltage
VCE(sat)
IC=1A,IB=0.05A
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=1A,IB=0.05A
1.2
V
Transition frequency
fT
VCE=2V,IC=0.5A
100
MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
30
pF
Tune on Time
ton
0.1
Storage Time
tstg
1
Switch time
Fall Time
tf
VCC=30V,Ic=1A,
IB1=-IB2=0.05A
0.1
μs
CLASSIFICATION OF hFE(1)
Rank
O
Y
Range
70-140
120-240
www.dgnjdz.com
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