BFQ18A datasheet(3/6 Pages) PHILIPS

3 / 6 page

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 4 GHz wideband transistor

BFQ18A

THERMAL RESISTANCE

Note

1. Ts is the temperature at the soldering point of the collector tab.

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

Note

1. Ic = 80 mA; VCE = 10 V; RL =75 Ω;

Vp =Vo = 700 mV; fp =795.25 MHz;

Vq =Vo −6 dB; fq = 803.25 MHz;

Vr =Vo −6 dB; fr = 805.25 MHz;

measured at f(p+q-r) = 793.25 MHz.

SYMBOL

PARAMETER

CONDITIONS

THERMAL RESISTANCE

Rth j-s

thermal resistance from junction to

soldering point

up to Ts = 155 °C (note 1)

20 K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

UNIT

hFE

DC current gain

IC = 100 mA; VCE = 10 V

−

collector capacitance

IE = ie = 0; VCB = 10 V; f = 1 MHz

−

2pF

emitter capacitance

IC = ic = 0; VEB = 0.5 V; f = 1 MHz

−

Cre

feedback capacitance

IC = 0; VCE = 10 V; f = 10.7 MHz

−

1.2

transition frequency

IC = 100 mA; VCE = 10 V; f = 500 MHz

−

GHz

dim

intermodulation distortion (see Fig.2)

note 1

−−60

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