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D24V0S1UG3LP20 Fiches technique(PDF) 2 Page - Diodes Incorporated |
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D24V0S1UG3LP20 Fiches technique(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page ![]() D24V0S1UG3LP20 Document number: DS43437 Rev. 1 - 2 2 of 5 www.diodes.com September 2021 © Diodes Incorporated D24V0S1UG3LP20 Maximum Ratings (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Conditions Peak Pulse Power Dissipation PPP 5680 W 8/20µs (Note 6) Peak Pulse Current IPP 200 A 8/20µs, per Figure 3 ESD Protection – Contact Discharge VESD_CONTACT ±30 kV Standard IEC 61000-4-2 ESD Protection – Air Discharge VESD_AIR ±30 kV Standard IEC 61000-4-2 Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 500 mW Thermal Resistance, Junction to Ambient TA = +25°C RθJA 250 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 ° C Electrical Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Working Voltage VRWM — — 24 V — Reverse Current IR — — 0.5 µA VR = VRWM Reverse Breakdown Voltage VBR 25.0 — 28.5 V IR = 1mA Reverse Clamping Voltage (Note 6) VCL — 25.1 27 V IPP = 100A, tP = 8/20μs — 27.1 30 IPP = 160A, tP = 8/20μs — 28.4 32 IPP = 200A, tP = 8/20μs ESD Clamping Voltage (Note 7) VC — 28.0 30.0 V IPP = 1A, tP = 100ns — 30.1 33.0 IPP = 30A, tP = 100ns — 27.5 31.0 IPP = 80A, tP = 100ns Capacitance CT — 630 — pF VR = 0V, f = 1MHz — 170 — VR = 24V, f = 1MHz Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporated’s suggested pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html. 6. Clamping voltage value is based on an 8x20μs peak pulse current (IPP) waveform, Measured from Pin1 and Pin2 to Pin3. 7. Transmission Line Pulse Test (TLP) settings: tP=100ns, tR=1ns, ITLP and VTLP averaging window is from 70ns to 90ns. |
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