BSP75N

Document number: DS33016 Rev. 6 - 2

4 of 9

www.diodes.com

June 2022

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BSP75N

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Conditions

Static Characteristics

Drain-Source Clamp Voltage

VDS(AZ)

60

70

75

V

ID = 10mA

Off State Drain Current

IDSS

—

0.1

3

µA

VDS = 12V, VIN = 0V

Off State Drain Current

IDSS

—

3

15

µA

VDS = 32V, VIN = 0V

Input Threshold Voltage (Note 8)

VIN(TH)

1

2.1

—

V

VDS = VGS, ID = 1mA

Input Current

IIN

—

0.7

1.2

mA

VIN = 5V

Input Current

IIN

—

1.5

2.7

mA

VIN = 7V

Input Current

IIN

—

4

7

mA

VIN = 10V

Static Drain-Source On-State Resistance

RDS(ON)

—

520

675

m

Ω

VIN = 5V, ID = 0.7A

Static Drain-Source On-State Resistance

RDS(ON)

—

385

550

m

Ω

VIN = 10V, ID = 0.7A

Current Limit (Note 9)

ID(LIM)

0.7

1.0

1.5

A

VIN = 5V, VDS > 5V

Current Limit (Note 9)

ID(LIM)

1

1.8

2.3

A

VIN = 10V, VDS > 5V

Dynamic Characteristics

Turn-On Time (VIN to 90% ID)

tON

—

3

—

μs

RL = 22Ω, VIN = 0V to 10V,

VDD = 12V

Turn-Off time (VIN to 90% ID)

tOFF

—

13

—

μs

RL = 22Ω, VIN = 10V to 0V,

VDD = 12V

Slew Rate On (70 to 50% VDD)

-dVDS/dtON

—

8

—

V/

μs

RL = 22Ω, VIN = 0V to 10V,

VDD = 12V

Slew Rate Off (50 to 70% VDD)

dVDS/dtON

—

3.2

—

V/

μs

RL = 22Ω, VIN = 10V to 0V,

VDD = 12V

Protection Functions (Note 10)

Minimum Input Voltage for Over

Temperature Protection

VPROT

4.5

—

—

V

—

Thermal Overload Trip Temperature

TJT

+150

+175

—

°C

—

Thermal Hysteresis

—

—

+1

—

°C

—

Unclamped Single Pulse Inductive Energy

TJ = +25°C

EAS

550

—

—

mJ

ID(ISO) = 0.7A, VDD = 32V

Unclamped Single Pulse Inductive Energy

TJ = +150°C

EAS

200

—

—

mJ

ID(ISO) = 0.7A, VDD = 32V

Inverse Diode

Source Drain Voltage

VSD

—

—

1

V

VIN = 0V, -ID = 1.4A

Notes:

8. Protection features may operate outside spec for VIN < 4.5V.

9. The drain current is limited to a reduced value when VDS exceeds a safe level.

10. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered

as

“outside” normal operating range. Protection functions are not designed for continuous, repetitive operation.