BAV99W datasheet(2/12 Pages) PHILIPS

2 / 12 page

1999 May 11

Philips Semiconductors

Product speciﬁcation

High-speed double diode

BAV99W

FEATURES

• Very small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 85 V

• Repetitive peak forward current:

max. 500 mA.

APPLICATIONS

• High-speed switching in e.g.

surface mounted circuits.

DESCRIPTION

The BAV99W consists of two

high-speed switching diodes

connected in series, fabricated in

planar technology, and encapsulated

in the very small SOT323 plastic SMD

package.

PINNING

DESCRIPTION

anode

cathode

common connection

Fig.1 Simplified outline (SOT323; SC-70) and symbol.

Top view

MAM094

Marking code: A7.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

VRRM

repetitive peak reverse voltage

−

continuous reverse voltage

−

continuous forward current

single diode loaded; note 1;

see Fig.2

−

150

double diode loaded; note 1;

see Fig.2

−

130

IFRM

repetitive peak forward current

−

500

IFSM

non-repetitive peak forward

current

square wave; Tj =25 °C prior to

surge; see Fig.4

t=1

µs

−

t=1ms

−

t=1s

−

0.5

Ptot

total power dissipation

Tamb =25 °C; note 1

−

200

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

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