BAS101_BAS101S

© Nexperia B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 14 December 2009

4 of 11

Nexperia

BAS101; BAS101S

High-voltage switching diodes

7.

Characteristics

[1] Pulse test: tp ≤ 300 μs; δ≤ 0.02.

[2] When switched from IF = 30 mA to IR =30mA; RL = 100 Ω; measured at IR =3mA.

Table 8.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Per diode

VF

forward voltage

IF =100 mA

[1] --

1.1

V

IR

reverse current

VR = 250 V

-

-

150

nA

VR =250 V; Tj =150 °C

-

-

100

μ

A

Cd

diode capacitance

VR =0V; f=1MHz

-

-

2

pF

trr

reverse recovery time

[2] -

-

50

ns