BAV103 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1996 Sep 17

Philips Semiconductors

Product speciﬁcation

General purpose diodes

BAV100 to BAV103

ELECTRICAL CHARACTERISTICS

Tj =25 °C; unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

forward voltage

see Fig.3

IF = 100 mA

−

1.0

IF = 200 mA

−

1.25

reverse current

see Fig.5

BAV100

VR =50V

−

100

VR = 50 V; Tj = 150 °C

−

100

µA

BAV101

VR = 100 V

−

100

VR = 100 V; Tj = 150 °C

−

100

µA

BAV102

VR = 150 V

−

100

VR = 150 V; Tj = 150 °C

−

100

µA

BAV103

VR = 200 V

−

100

VR = 200 V; Tj = 150 °C

−

100

µA

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

−

5pF

trr

reverse recovery time

when switched from IF = 30 mA to

IR = 30 mA; RL = 100 Ω;

measured at IR = 3 mA; see Fig.8

−

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

300

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

375

K/W

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